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Search results for: wide bandgap semiconductors, gan transistors, power transistors, overcurrent protection, smps, gate circuit
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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Thermal and Electrodynamic Risk of Residual Current Devices in the Case of Back-Up Protection by Overcurrent Circuit Breakers
PublicationResidual current operated circuit breakers without integral overcurrent protection should be back-up protected. As back-up protection devices, overcurrent circuit breakers are used. The maximum let-through energy and let-through current of the overcurrent devices were evaluated under laboratory conditions. The thermal and electrodynamic risk of residual current devices was analyzed.
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Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
PublicationUnbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier...
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Performance Evaluation of a 650V E-HEMT GaN Power Switch
PublicationGaN power switches have better characteristics compared to the state-of-the-art Si power transistors. These devices offer high operating temperature and current densities, fast switching and low on-resistance. However, currently only a few producers offer technology of high voltage GaN transistors. Immaturity of this technology is the reason why experimental evaluation of GaN parameters must be performed to properly exploit their...
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Performance Comparison of a 650 V GaN SSFET and CoolMOS
PublicationThe new technology of wide band gap semiconductors is said to outperform up-to-date silicon devices. High voltage Gallium Nitride (GaN) transistors, now emerging in the market, have even three times shorter switching times and even four times smaller energy losses compared to the best in-class Si devices. In this paper the performance of a 650 V GaN SSFET is evaluated and compared with the newest silicon family of CoolMOS™ technology....
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Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublicationAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
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EMI attenuation in a DC-DC buck converter using GaN HEMT
PublicationA dc-dc buck converter using gallium nitride (GaN) high electron mobility transistors (HEMT) is experimentally investigated at the discontinuous current mode (DCM) and at the triangular current mode (TCM) operation. The paper objective is to specify the power conversion efficiency and attenuation of common mode (CM) and differential mode (DM) noise voltage, measured at the line impedance stabilization network (LISN) for compared...
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Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublicationWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
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Scheelite-Type Wide-Bandgap ABO4 Compounds (A = Ca, Sr, and Ba; B = Mo and W) as Potential Photocatalysts for Water Treatment
PublicationIn the present study, alkaline-earth metal scheelite-type compounds ABO4 (A = Ca, Sr, Ba, B = Mo, W) synthesized by a hydrothermal method were systematically studied. The as-obtained photocatalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Brunauer-Emmett-Teller surface area analysis (BET), UV–Vis diffuse reflectance spectroscopy (DR/UV-Vis), photoluminescence, and thermoluminescence (TL)...
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublicationThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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A New, Reconfigurable Circuit Offering Functionality of AND and OR Logic Gates for Use in Algorithms Implemented in Hardware
PublicationThe paper presents a programmable (using a 1-bit signal) digital gate that can operate in one of two OR or AND modes. A circuit of this type can also be implemented using conventional logic gates. However, in the case of the proposed circuit, compared to conventional solutions, the advantage is a much smaller number of transistors necessary for its implementation. Circuit is also much faster than its conventional counterpart. The...
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The PWM current source inverter with IGBT transistors and multiscalar model control system
PublicationW niniejszym artykule przedstawiono struktury układów sterowania maszyny indukcyjnej zasilanej z falownika prądu. Przedstawiono metodę modulacji szerokości impulsów dla falownika prądu. Pokazano modele matematyczne maszyny indukcyjnej klatkowej zasilanej z falownika prądu. Przedstawiono trzy układy regulacji sterowania multiskalarnego z czego dwa są nowe. Rozważania teoretyczne zweryfikowano za pomocą badań symulacyjnych.
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GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon
PublicationAbstract: We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance...
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Behawioralne modelowanie i symulacja tranzystorów IGBT w układach energoelektronicznych = Behavioural modeling and simulation of IGBT transistors in power electronics systems
PublicationW referacie przedstawiono rezultaty prac nad modelem tranzystora bipolarnego z izolowaną bramką (IGBT), przydatnym w symulacjach układów energoelektronicznych wymagających odwzorowania zarówno stanów ustalonych jak i dynamicznych przy przełączaniu. Rozważono behawioralny model IGBT o reprezentacji za pomocą równań stanu przy wykorzystaniu katalogowych charakterystyk statycznych oraz nieliniowych aproksymacji pojemności pasożytniczych....
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublicationThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...
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Magnetic Field Generated by Short Circuit Current in the 110 kV Power System
PublicationElectric fields within tissues induced by magnetic fields including transients or short-term peaks should not be time averaged and be regarded as instantaneous values as established in the ICNIRP (International Commission on Non - Ionizing Radiation Protection) guidelines. Measurements of power lines magnetic fields with regard to human beings exposure are carried out typically with maximum current load at current balance condition...
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Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors
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Study of ZrS3-based field-effect transistors toward the understanding of the mechanisms of light-enhanced gas sensing by transition metal trichalcogenides
PublicationExtending knowledge of the properties of low-dimensional van der Waals materials, including their reactivity to the ambiance, is important for developing innovative electronic and optoelectronic devices. Transition metal trichalcogenides with tunable optical band gaps and anisotropic conductivity are an emerging class among low- dimensional structures with the possibility of gate tunability and photoreactivity. These properties...
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Automatic tuning of a resonant circuit in wireless power supply systems for biomedical sensors
PublicationIn this paper, a tuning method of a resonant circuit suited for wireless powering of miniature endoscopic capsules is presented and discussed. The method allows for an automatic tuning of the resonant frequency and matching impedance of a full wave rectifier loading the resonant circuit. Thereby, the receiver tunes so as to obtain the highest power efficiency under given conditions of transmission. A prototype receiver for wireless...
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Magnetic and capacitive couplings influence on power losses in double circuit high voltage overhead transmission line
PublicationPurpose – The paper aims to discuss problems of power and energy losses in a double-circuit overhead transmission line. It was observed from energymeters’ readings, that in such a line, active power losses can be measured as “negative”. The “negative” active power losses appear when the active power injected to the circuit is lower than the active power received at the circuit end. The purpose of this paper is to explain this phenomenon. Theoretical...
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Calculation of Induced Sheath Voltages in Power Cables – Single Circuit System versus Double Circuit System
PublicationThis paper presents comparison of values of induced sheath voltages in power cable metallic sheaths when one or two cables per phase are used. Calculation of voltages is performed for various phase sequences of the power cables. Three types of the sheaths bonding and earthing are considered. Shock hazard and voltage stress of non-metallic outer sheath of cables are evaluated. The proposed, optimal configuration of the power cable...
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Transient States during Short-circuit in a Line Powered by UPS and its Impact on Earth Fault Loop Impedance Measurement and Power Quality
PublicationThe short-circuit in a line powered by Uninterruptible Power Supply (UPS) during different UPS operation modes is presented in the article. The transient state condition related to the short-circuit in a line fed from double conversion On-line UPS is discussed in detail. The results of the measurements of earth fault loop impedance (FLI) in circuits powered by UPS with the instruments of various manufacturers are presented. The...
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System of protection against electric shock for circuits with power electronics converters
PublicationModern low voltage circuits are very often equipped with power electronics converters, therefore in these circuits non-sinusoidal earth currents (touch currents) may occur. For non-sinusoidal currents safety criteria should be modified. This paper presents these modified criteria and a computer system of protection against electric shock which can be implemented in circuits with power electronics converters. The system is based...
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Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application
PublicationPoly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In present work, GaN nanowires with diameters...
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Remarks on the Subject of Back-Up Protection of Residual Current Devices
PublicationResidual current devices without integral overcurrent protection (RCCBs) are back-up protected by fuses or miniature circuit-breakers (MCBs). If the latter are used, special attention must be given to the coordination between an RCCB and an MCB. This paper indicates probable cases of the aforementioned devices coordination, in which back-up protection of the RCCB is not adequate. A laboratory test has shown that depending on the...
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Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition
PublicationWe report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a continuous diamond film with the presence of well-developed grains, the GaN substrates are exposed to hydrogen plasma prior to deposition....
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The effects of gas exposure on the graphene/AlGaN/GaN heterostructure under UV irradiation
PublicationThis work demonstrates a graphene/AlGaN/GaN sensing device with two-dimensional electron gas (2DEG) toward nitrogen dioxide (NO2), tetrahydrofuran, and acetone detection under UV light irradiation. We propose combining measurements of the DC characteristics with a fluctuation-enhanced sensing method to provide insight into the gas detection mechanisms in the synergistic structure of highly stable GaN and gas-sensitive graphene....
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Magnetic and capacitive couplings influence on power and energy measurement in double circuit high voltage overhead transmission line
PublicationThe paper discusses influence of magnetic and capacitive couplings on power and energy measurement in case of double circuit high voltage overhead transmission line. There are presented and discussed various factors influencing the power flow among the line‟s circuits. Mathematical model based calculations results are compared to the real transmission line measurements.
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Analysis of the dynamic influences on the Lowland Gate in Gdańsk
PublicationThe Lowland Gate has been built in 1626. It is one of the best-preserved historical buildings in Gdansk. The structure is still of the city's infrastructural importance as through it goes a road connecting two districts. The Gate is now so neglected that it is hard to appreciate its value. The main purpose of the investigation carried out was to determine the harmfulness of the traffic on the structure as well as the reasons of...
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Electron mobility variance in semiconductors: the variance approach
PublicationPraca przedstawia nowe podejście da analizy zjawisk losowych w półprzewodnikach. Uwzględnia kilka mechanizmów zjawisk fluktuacji ruchliwości w półprzewodnikach, prowadzących do powstawamai składowej szumów typu 1/f, dominujących w zakresie małych czetotliwości. Przedstawia analizę sposobu wyznaczenia stałej Hooge'a określającej intensywność szumów typu 1/f.The statistical non-triviality of current carrier mobility fluctuations...
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Design of Inner Gate for CRIST Shipyard Dry Dock
PublicationThe paper deals with a removable steel inner gate which was designed to separate two parts of a dry dock of about 70 m in width and 380 m in length. The gate allows for independent assembly of ship structures in two separated parts of the dock. The fore part of the dock can be flooded while the after part is dry. Tthe gate was designed by IDEK Company Ltd in 2011 and it was soon constructed and used by CRIST Shipyard in Gdynia.
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Zastosowanie tranzystorów GaN w wysokoczęstotliwościowych przekształtnikach DC/DC
PublicationW artykule przedstawiono tranzystory mocy z azotku galu (GaN) jako przyrządy, umożliwiające budowanie wysokoczęstotliwościowych przekształtników energoelektronicznych. Opisano tranzystory GaN HEMT SSFET, przedstawiono sposób ich sterowania i czasy przełączeń. Podano wyniki badań eksperymentalnych przekształtnika obniżającego napięcie o sprawności 96,5%, pracującego z częstotliwością przełączeń 500 kHz. Zaprezentowano metodę doboru...
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Modal Analysis of a Steel Radial Gate Exposed to Different Water Levels
PublicationWith the increase in water retention needs and planned river regulation, it might be important to investigate the dynamic resistance of vulnerable elements of hydroelectric power plants, including steel water locks. The most frequent dynamic loads affecting hydroengineering structures in Poland include vibrations caused by heavy road and railway traffic, piling works and mining tremors. More destructive dynamic loads, including...
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3D PCB package for GaN inverter leg with low EMC feature
PublicationThis paper presents the adaptation of a 3D integration concept previously used with vertical devices to lateral GaN devices. This 3D integration allows to reduce loop inductance, to ensure more symmetrical design with especially limited Common Mode emission, thanks to a low middle point stray capacitance. This reduction has been achieved by both working on the power layout and including a specific shield between the devices and...
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Design Considerations of GaN Transistor Based Capacitive Wireless Power Transfer System
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Novel single-stage buck-boost inverter with unfolding circuit
PublicationA novel solution of a single-stage buck-boost inverter with unfolding circuit at the output stage is presented. The inverter has a wide range of input voltage regulation, minimum passive components and a very flexible control structure. It can be applied for renewable energy systems where high power density is required. Our simulation results confirmed all theoretical statements
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Conducted emi identification in power electronic converters : modeling of EMI generation and propagation using circuit simulation and wiener filtering methods.
PublicationThis work presents the circuit simulations and the conventional signal processing technique (Wiener filtering) in order to reconstruct conducted ElectroMagnetic Interferences (EMI), generated and propagated in power electronics converters. In the simulation study, the most accurate presently available models of components of circuit have been used and improved. The proposed Wiener filtering method allows to identifying the transfer...
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Effect of the let-through energy of overcurrent protective devices on the temperature of conductors during short-circuits
PublicationThe scope of the verification of low-voltage systems covers the earth fault loop impedance measurement. This measurement is usually performed with the use of low-value current meters, which force a current many times lower than the one occurring during a real short-circuit. Therefore, the international standard recommends consideration of the increase of resistance of conductors with the increase of temperature, which may occur...
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Numerical modal analysis of a vertical rising steel water gate
PublicationVertical rising steel water gates are very common not only in Poland and Germany but also in other countries of the world. Their popularity is mainly attributed to their simplicity of construction, which makes their production process cheaper and faster when compared to other solutions. The aim of this paper is to conduct a numerical modal analysis to examine the eigenvalues and eigenmodes of a vertical rising steel gate. Two cases...
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Analytical Estimation of Power Losses in a Dual Active Bridge Converter Controlled with a Single-Phase Shift Switching Scheme
PublicationMicro-grid solutions around the world rely on the operation of DC/DC power conver- sion systems. The most commonly used solution for these topologies is the use of a dual active bridge (DAB) converter. Increasing the efficiency and reliability of this system contributes to the improvement in the stability of the entire microgrid. This paper discussed an analytical method of energy efficiency and power loss estimation in a single...
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Comparative analysis of different numerical models of a steel radial gate
PublicationHydrotechnical structures are important components in water management system and general flooding safety. Their reliability should be ensured since potential damage might lead to catastrophic consequences. Weir gates are considered to be highly vulnerable elements of each hydro power plant, with regard to its dynamic resistance. The aim of the paper is to compare different numerical models and their influence on the results of...
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Neutral earthing reactor protection
PublicationThe IEEE and CIGRE recommend protection systems for high voltage shunt reactors. Unfortunately the recommendations do not include guidelines for the protection of neutral earthing reactors, which are often connected to shunt reactors to increase the effectiveness of single pole auto-reclosing. The paper discusses earthing reactor protection issues with particular emphasis on the detection of internal faults. An analysis carried...
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Innovative Bidirectional Isolated High-Power Density On-Board Charge for Vehicle-to-Grid
PublicationThis paper deals with developing and implementing a bidirectional galvanically isolated on-board charger of a high-power density. The power density of the new charger was 4 kW/kg and 2.46 kW/dm3, and the maximum efficiency was 96.4% at 3.4 kW. Due to the requirement to achieve a high-power density, a single-stage inverter topology was used. Regarding switching losses, due to the topology of the circuit with so-called hard switching,...
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Modal analysis of a fish-belly flap type of steel water gate
PublicationABSTRACT: The results of a modal analysis of the fish-belly flap type of steel water gate are presented in the paper. The analysis was conducted for a detailed numerical model of the structure using four-node quadrilateral shell elements. The study was focused on the examination of the influence of positioning of the flap gate and hydrostatic pressure of water on the eigenvalues and eigenmodes of the structure. The results of the study...
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Modelling and analysis of medium frequency transformers for power converters
PublicationThe evolutions in power systems and electric vehicles, related to the economic opportunities and the environmental issues, bring the need of high power galvanically isolated DC-DC converter. The medium frequency transformer (MFT) is one of its key components, enabled by the increasing switching frequency of modern power semiconductors like silicon carbide transistors or diodes. The increased operating frequency offers small...
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Comparison of Overcurrent Responses of 2G HTS Tapes
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A first-principles study of electronic and magnetic properties of 4d transition metals doped in Wurtzite GaN for spintronics applications
PublicationWe studied the electronic and magnetic properties of wurtzite GaN (w-GaN) doped with different concentrations of the 4d transition metal ions Nb, Mo, and Ru. We incorporated spin-polarized plane-wave density functional theory within an ultrasoft pseudopotential formalism. The 4d transition metals were doped at different geometrical sites to determine the geometry with the lowest total energy and the one that induced the largest...
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Modeling of Transient Photocurrent in Organic Semiconductors Incorporating the Annihilation of Excitons on Charge Carriers
PublicationThe role of the annihilation of excitons on charge carriers has been theoretically investigated in organic semiconductors. We have developed the numerical drift-diffusion model by incorporation terms which describe the annihilation process. The transient photocurrent has been calculated for different injection barrier heights, exciton mobilities, and annihilation rate constants. We have demonstrated that the annihilation has a...