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Luminescence of TeO2:Eu thin films
Dane BadawczeTellurium dioxide doped by europium thin films were deposited by magnetron sputtering method and simultaneously heated at 200 oC. Presence of Eu ions and their valence states was confirmed by X-ray photoemission spectroscopy measurements. The structure of the films as well as the influence of europium dopant on crystalline structure of the films was...
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SEM images of dewetted gold films
Dane BadawczeGold nanostructures were prepared on silicon - Si(111) as a substrate. as a result of dewetting process. Thin golds films were deposited using a table-top dc magnetron sputtering coater under pure Ar plasma conditions . The Au target had 99.99% purity, the rate of Au layer deposition was about 0.4 nm·s−1 and the incident power was 32 W. The thickness...
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Optical transmission of the Niobium thin films
Dane BadawczeNiobium thin films with a thickness of 200nm were deposited n a Corning glass substrate by magnetron sputtering method. The optical transmission spectra in a visible light range were.recorded. Investigations showed a good optical transmission thru the layers for each samples, annealed at various temperatures. For measurements samples annealed at 500,...
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Structural investigations of the LTO:Cu thin films
Dane BadawczeLithium titanate (Li1+xTi2-xO4) doped with Cu2+ ions was synthesized by sol-gel processing method. The structure was characterized by X-ray Diffraction (XRD). All samples revealed presence of LTO spinel phase. X-ray pattern of undoped LTO was free of any impurities and other crystal phases. Similarly, samples with low amount of copper dopant (x = 0.05...
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Morphology of the sol-gel derived LTO:Cu films
Dane BadawczeMorphology of the lithium titanate doped by Cu thin films were investigated by SEM microscope. Films were deposited by spin-coater from sol-gel derived sol. SEM images showed a high porous structure, tipaciall for sol-gel based films. For measurements samples with a various content of Cu were selected.
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XRD investigations of the lithium titanate thin films
Dane BadawczeNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing temperature on as-prepared films crystallization, the coatings were heated at temperature from 500 °C up to 600 °C for 20h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible...
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XRD analysis of the tellurium dioxide thin films
Dane BadawczeTellurium dioxide thin films were deposited by magnetron sputtering method. The XRD analysis of the films annealed at 200, 500, 650 and 700 celsius degree showed appearing of crystalline phase in a higher temeratures.
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Analysis of the electrical parameters of the LTO thin films
Dane BadawczeLithium titanate thin films were derived by sol-gel technique. Films with thickness ca. 800 nm were annealed for various time, in a range of 10h-80h at 550 deg. Electrical conductivity in a wide range of temperature was measured.
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Electrical measurements of the dewetting of metal thin films
Dane BadawczeIn situ observations of dewetting of thin films is very complicated. One of the method, that helps to observe it, could be electrical measurements. For experiments, thin gold, silver and gold-silver nanoalloy films were deposited by magnetron sputtering method. Films were deposited on a Corning glass substrates. Samples were measured by four point method...
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Dewetting of silver films detected by XPS method
Dane BadawczeDewetting of silver thin films was detected by XPS method. Thin metallic films were deposited by magnetron sputtering method. Formation of nanostructures , as a result of thermal annealing, was confirmed by SEM microscope. For comparision three samples were measured. Bulg gold, as-deposited silver film with thickness of 3 nm and nanostructures.
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Luminescence properties of TeOx-Eu thin films
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Tb thin films
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Dy thin films
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
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Structural analysis of the tellurium dioxide thin films
Dane BadawczeTeO2 thin films were deposited by magnetron sputtering method. After deposition, amorphous samples were annealed at various temperatures. Influence of annealing temperature on a presence of crystalline phase was investigated.
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Optical properties of tellurium dioxide thin films
Dane BadawczeTeO2 and TeO2 doped by Eu thin films manufactured by magnetron sputtering method were measured by optical spectroscopy. Metallic Te target and Te-Eu mosaic target with diameter of 50.8 mm were sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate...
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Structural investigations of the Al2O3 ultra thin films
Dane BadawczeUltra-thin layers of Al2O3 were deposited by atomic layer deposition (ALD) (Beneq TFS 200 ALD system). This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2...
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Chemical investigation of the Al2O3 ultra-thin films
Dane BadawczeUltra-thin layers of oluminum oxide (Al2O3) were deposited by ALD method. Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2 and 8 nm of alumina...
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TEM and EDX study of the Al2O3 ultra thin films
Dane BadawczeThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
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Chemical investigations of the MoO3 doped by K films deposited FTO
Dane BadawczeMoO3 thin films were synthesized via thermal annealing of thin, metallic Mo films deposited onto the FTO substrate using a magnetron sputtering system. The influence of photointercalation of alkali metal cation (K+) into the MoO3 structure on the photoelectrochemical properties of the molybdenum trioxide films was investigated. The chemical characterisation...
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XRD patterns of V2O5 thin films deposited on silicon substrate
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
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XRD patterns of V2O5 thin films deposited on quartz glass
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on a quartz glass substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 200-600C. The results show that the structure of the films dependent on the annealing temperature.
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Impedance spectroscopy of the lithium titanate doped by copper thin films
Dane BadawczeLithium titanate doped by copper thin films were derived by sol-gel method. Prepared gel was deposited by spin-coating technique. Samples with various content of Cu were measured by impedance spectroscopy method in a wide range of temperature, from -120 up to 150 deg.
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Optical measurements of LTO:Cu sol-gel derived thin films
Dane BadawczeLithium titanate doped by copper thin films were manufactured by chemical, sol-gel method. Flms were deposited on a Corning glass substrated by spin coater. To calculated optical band gap and other optcal parameters, UV-VIS spectroscopy measurements were performed. For measurements selected samples with various content of Cu.
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Substrate characterization in a electrochemically derived Manganium-Cobaltium thin films
Dane BadawczeManganium-Cobaltium thin films were electrochemically deposited on a Ni foams subsrates in a one-step process at −1.1 V vs. Ag/AgCl in an aqueous solution of differently concentrated Mn(NO3)2·4H2O and Co(NO3)2·6H2O with the deposition time limited by charges of 60, 120, and 200 mC at 25 °C. The concentration ratios of Mn(NO3)2·4H2O to Co(NO3)2·6H2O...
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The AFM micrographs of vanadium oxides thin films obtained at 800°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on a silicon substrate and vanadium thin films were obtained by annealing as-prepared films at...
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The AFM micrographs of vanadium oxides thin films obtained at 1200°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 400°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 600°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of of vanadium oxides thin films obtained at 300°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxide thin films obtained at 100°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 150°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 200°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 450°C
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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Optical measurements of lithium titanate sol-gel derived thin films
Dane BadawczeNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin...
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SEM micrographs of morphology evolution of V2O5 thin films on quartz glass
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a quartz glass substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 200-600C. The results show that the morphology of the films dependent on the annealing temperature.
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SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
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Structure and optical measurements of Eu doped tellurium oxide thin films
Dane BadawczeThin films were deposited by magnetron sputtering method and simultaneously heated at 200 oC. Presence of Eu ions and their valence states was confirmed by X-ray photoemission spectroscopy measurements. The structure of the films as well as the influence of europium dopant on crystalline structure of the films was examined by X-ray diffraction method. ...
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Luminescence properties of TeOx thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. The sol was obtained by vigorously stirring precursor solution at 50°C for 2h, then the temperature was raised...
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XRD patterns of VO2 and V2O3 thin films obtained at 500°C
Dane BadawczeThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon atmosphere.
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XRD patterns of VO2 and V2O3 thin films obtained at 700°C
Dane BadawczeThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (5-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon atmosphere.
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Graphene oxide thin films deposited on a PCB board - chemical analysis
Dane BadawczeGraphene oxides based films were measured by X-ray photoemission spectroscopy (XPS) method. TheXPS measurements were carried out with the Omicron NanoTechnology UHV equipment. The hemispherical spectrophotometer was equipped with a 128-channel collector. The XPS measurements were performed at room temperature at a pressure below 1.1 × 10−8 mBar. The...
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Luminescence properties of TeOx-Dy thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
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Luminescence properties of TeOx-Tb thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Eu thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method
Dane BadawczeThin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737...
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Evaluation of the content of zinc compounds in polyethylene films using scanning electron microscopy
Dane BadawczeThe dataset contains the results of in the form of micrographs made using a scanning electron microscope (SEM) S–3400N (Hitachi, Hyogo, Japan) using backscattered electron (BSE) detector. SEM was equipped with tungsten filament. The accelerating voltage was 25 kV. Utilization of BSE detector allowed to increase the contrast of local areas varying in...
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XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. ...
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SEM micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films were deposited on a silicon and quartz glass substrate and were annealing at 1000°C under an argon atmosphere.
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XRD and electrochemical results for MoO3 films deposited using pulsed laser deposition system
Dane BadawczeThe attached data contains XRD and electrochemical results for MoO3 films deposited on fluorine-doped tin oxide glasses. Films were deposited using a pulsed laser deposition system at different conditions. Part of the samples was deposited at room temperature and then annealed at 575°C for given times (samples labeled PLD_RT_575C_xmin, where x stands...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 700°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 500°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon...
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The AFM micrographs of vanadium oxides thin films deposited on silicon - the influence of the thickness of the film on morphology
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a silicon substrate and were annealing...
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XPS data of as-grown BDD, as-implanted Mn-BDD, and annealed Mn-BDD thin films
Dane BadawczeXPS survey spectra and detailed spectra O1, C1s and Mn2p of as-grown BDD, as-implanted Mn-BDD, and annealed Mn-BDD thin films. X-ray photoelectron spectroscopy (XPS) studies were conducted on an Escalab 250 Xi from Thermo Fisher Scientific with an Al Kα radiation. Results were published in the paper ( https://doi.org/10.1002/adfm.202308617)
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Electrical responses of nanoporous NiO films for light-activated nitrogen dioxide and acetone gas sensing
Dane BadawczeThe chemoresistive sensor response of nanoporous NiO films prepared by advanced gas deposition was investigated with and without simultaneous light irradiation, to detect nitrogen dioxide and acetone gases. The presented data show electrical responses presented as sensor resistance or relative changes in sensor resistance under selected environment...
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Luminescence properties of TeOx-2%Eu1.5%Tb1.5%Dy thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-2%Eu1.5%Tb1.5%Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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Luminescence properties of TeOx-2%Eu1.5%Tb1.5%Tm thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-2%Eu1.5%Tb1.5%Tm thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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Luminescence properties of TeOx-1%Eu1.5%Tb2.5%Dy thin films annealing under an oxidizing atmosphere
Dane BadawczeThe DataSet contains the emission and excitation spectra of TeOx-1%Eu1.5%Tb2.5%Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
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Scanning electron microscopy (SEM) images of boron-doped diamond thin films at poly(lactic acid)
Dane BadawczeThe dataset contains the photos obtained by scanning electron microscope(SEM), revealing the surface morphology and cross-section of boron-doped diamond electrodes on commercially available graphene-doped polylactide acid. The boron doping level expressed as the [B]/[C] ratio in the gas phase for these studies was 500 and 10,000 ppm. The top views of...
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Structure evolution of V2O5 thin films deposited on quartz glass substrate - High-Temperature X-ray Diffraction
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 thin films deposited on guartz glass. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the quartz glass substrate. The structure was measured in-situ during heating between 50-800°C under synthetic...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C dependent on film thickness
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (2-3 AsP layers) were deposited on a silicon substrate and were annealing at 1000°C under an argon...
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The electrochemical studies of thin boron-doped diamond films deposited at conductive poly(lactic acid) 3D prints
Dane BadawczeThe dataset contains the electrochemical characteristics of the electrodes composed of thin boron-doped diamond films coated on commercially available graphene-doped polylactide acid. The boron doping level expressed as the [B]/[C] ratio in the gas phase for these studies was 500 and 10,000 ppm.
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The AFM micrographs of vanadium oxides thin films deposited on quartz glass - the influence of the thickness of the thin film on its morphology
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a quartz glass substrate and were...
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TEM data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Dane BadawczeThis Dataset include presentation of summarized TEM investigation of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited...
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SEM/EDX data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Dane BadawczeThis Data set include SEM and EDX results of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited layers were amorphous,...
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Total electrical conductivity data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Dane BadawczeThis dataset includes electrical conductivity measurements results measured by van der pauw technique up to 900oC.
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XRD data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe, annealed in a range from 400 to 900oC
Dane BadawczeDataset include collected XRD data of (Cr,Fe,Mn,Co,Ni)3O4 high-entropy spinel oxide thin films deposited by spray pyrolysis technique on amorphous SiO2 substrates and annealed from 400 to 900oC. Samples were prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers...
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The AFM micrographs of V2O5 single crystals
Dane BadawczeThe DataSet contains the atomic force microscope images of the surface of V2O5 single crystals. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The As-prepared films were deposited on a quartz glass substrate and were annealing at 600°C under synthetic air.
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Morphology of the gold nanoislands
Dane BadawczeDewetting of the thin metallic films leads to formation of an isolated islands. morphology of nanostructures was measured by SEM microscope. Thin gold films with a thickness of 1.2 nm, 1.5 nm and 3.4 nm were anealed at 550, 600 and 650 Celcius degress.
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SEM micrographs of V2O5 thin film morphology dependent on substrate types
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin film morphology dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h. The results show that the morphology of...
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Au nanostructures coated with a ultrathin film of Al2O3 - measurements and FDTD simulations
Dane BadawczeGold plasmonic platforms have been coated with an ultra-thin films of aluminium oxide. Optical measurements, showing the influence of the thickness of Al2O3 on plasmon resonance position. The observed red-shift of the resonance location with the increase of the thickness of the Al2O3 film, can be explained by the change in the dielectric function of...
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SEM inwestigation of the silver nanostructures
Dane BadawczeSilver thin films with a thickness of 1nm, 3nm, 5nm, 7nm and 9nm were deposited by a table-top magnetron sputtering unit in a pure argon plasma from a high-purity silver target. Silicon wafers was used as a substrates. As-deposired films were annealed in Ar atmosphere at 550 Celsius degree for 15 minutes.As a result of annealing, Ag nanostructures formed...
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XRD patterns of VO2 and V6O13 nanostructures
Dane BadawczeThe DataSet contains the XRD patterns of VO2 and V6O13 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under a reducing atmosphere (94% Ar, 6% H2) at 500, 600 and 700C for 10h.
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XRD patterns of vanadium oxide nanostructures on silicon substrate obtained by V2O5 recrystallization
Dane BadawczeThe DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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XRD patterns of vanadium oxide nanostructures on quartz glass substrate obtained by V2O5 recrystallization
Dane BadawczeThe DataSet contains the XRD patterns of vanadium oxide nanostructures on quartz glass substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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Chemical composition of V2O5 nanorods
Dane BadawczeThe DataSet contains the chemical compositions of the V2O5 nanorods on a silicon substrate. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The As-prepared thin films were annealed at 600C under a synthetic air atmosphere.
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SEM micrographs of VO2 and V6O13 nanostructures
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V6O13 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under a reducing atmosphere (94% Ar, 6% H2) at 600 and 700C for 10h.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 1000°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 1000°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 800°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 800°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 1200°C
Dane BadawczeThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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Measurements of AuAg nanostructures
Dane BadawczeExtensive UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters.
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Processed measurements of AuAg nanostructures
Dane BadawczeExtensive processed UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters.
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UV-Vis measurements and SEM images of Ag nanostructures
Dane BadawczeUv-vis and SEM of Ag nanostructures. Structures were obtained by dewetting thin films. Various fabrication conditions i.e. temperature, time of the annealing and thickness of the initial layer were subsequently changed.
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X-Ray diffraction of the metallic nanostructures
Dane BadawczeMetallic nanostructures (gold and silver) were manufactured as a thermal annealing of gold or silver thin film. Gold films with thickness of 2.8 nm were deposited on a silicon substrates using a table-top dc magnetron sputtering coater (EM SCD 500, Leica), equipped with quartz microbalance for in-situ thickness measurements. Films were deposited from...
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Oxidation of silver nanostructures
Dane BadawczeSilver nanostructures were prepared on Si substrate. Thin Ag films (2 and 6 nm thickness) were deposited using a tabletop dc magnetron sputtering coater (EM SCD 500, Leica) in pure Ar plasma. The Ag target was of 99.99% purity, the rate of layer deposition was about 0.4 nm·s−1 , and the incident power was in the range of 30–40 W. The layer thickness...
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Comparison of XPS spectra of Ag3d for silver nanostructures and bulk material
Dane BadawczeAg nanostructures were prepared on borosilicate glass (Corning 1737F) and Si substrates. In both cases, the substrateswere cleaned with acetylacetone and then rinsed in ethanol. Thin Ag films (2 and 6 nm thickness) were deposited using a tabletop dc magnetron sputtering coater (EM SCD 500, Leica) in pure Ar plasma (argon, Air Products 99.999%). The...
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Raw data of AuAg nanoalloy plasmon resonances used for machine learning method
Dane BadawczeRaw data used for machine learning process. UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters. Small presentation reviewing achieved structures and their properties.
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TEM imaging of metal nanoparticle cross section
Dane BadawczeTEM microscope was used for a imaging of metallic nanostructures. Metallic nanostructures were manufactured by thermal annealing of thin films. Gold and silver nanostructures were chosen for measurements. Samples were annealed for 15 and 60 minutes at 550 deg.
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Raman data of based on BDD, Mn-BDD, Mn-BDD(AN) electrodes
Dane BadawczeRaman spectra of samples : ion implanted BDD (Mn-BDD) films; prepared by high dose (1015-1017 ions/cm2) Mn ion implantation and post-annealing treatment.
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Investigation of plasmon resonance in a silver nanoparticles
Dane BadawczeSilver nanostructures were prepared on borosilicate glass (Corning 1737F) substrates. Thin Ag films (1–9 nm thickness) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) in pure Ar plasma (argon, Air Products 99.999%). The Ag target was of 99.99% purity, the rate of layer deposition was about 0.4 nm·s−1, and the incident...
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SEM images of tge gold nanostructures on silicon
Dane BadawczeAu nanostructures were prepared on Si(111) as a substrate. The substrates (1 × 1 cm2 of area) were cleaned with acetylacetone and then rinsed in ethanol. Thin Au films (with thicknesses in a range of 1.7–5.0 nm) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) under pure Ar plasma conditions (Argon, Air Products 99.999%)....
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Interface diffusion between metallic nanoparticles and silicon substrate
Dane BadawczeInterface diffusion between metallic nanoparticles and silicon substrate was detected by EDX method. Metallic nanostructures were manufactured by thermal annealing of thin films. Gold and silver nanostructures were chosen for measurements. Samples were annealed for 15 and 60 minutes at 550 deg.
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Formation of gold anostructures detected by SEM microscope
Dane BadawczeGold nanostructures were prepared on silicon - Si(111) as a substrate. The substrates (1 × 1 cm2 of area) were cleaned with acetylacetone and then rinsed in ethanol. Thin Au films (with thicknesses in a range of 1.7–5.0 nm) were deposited using a table-top dc magnetron sputtering coater (EM SCD 500, Leica) under pure Ar plasma conditions (Argon, Air...
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The assessment of microbiological antimicrobial properties of PE film loaded with nanozinc filler
Dane BadawczeThe dataset contains the results of a single series of determinations of the antimicrobial properties against E. coli and S. aureus of polyethylene films containing the nanozinc filler.
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Hemocompatibility of nanocrystalline diamond layers
Dane BadawczeThe biocompatibility of the diamond films were investigated with whole human blood samples. Blood used in this study was drawn from 10 healthy human patients of different age, sex, and blood group. A 2 ml samples were collected into standard tubes with EDTA anticoagulation agent. Blood was used within 6 hours from the collection time. A reference blood...
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The AFM micrographs of isotropic etching silicon substrates (111)
Dane BadawczeThe DataSet contains the atomic force microscope images of isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 20 to 90 seconds
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XRD patterns of V2O5 thin film morphology dependent on substrate types
Dane BadawczeThe DataSet contains the XRD patterns of the V2O5 thin film structure dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h.
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Temperature of formation of Au nanostructures
Dane BadawczeNanostructures were obtained via annealing of thin Au films. In order to determine possible nanoislands formation mechanisms, dependence on initial film thickness was examined. For the surface morphology studies, nanograin structure and chemical composition analysis, SEM, HR TEM and EDS measurements were performed, respectively. Morphology studies shown...
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XRD patterns of the V2O5 coatings after thermal treatment under reducing atmosphere
Dane BadawczeThe DataSet contains the XRD patterns of V2O5 coatings on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C, 600C, and 700C for 10 under a reducing atmosphere (94% Ar, 6% H2).