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Search results for: TRANSISTOR-LEVEL SIMULATION
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Mechanical-Level Hardware-In-The-Loop and Simulation in Validation Testing of Prototype Tower Crane Drives
PublicationIn this paper, the static and dynamic simulations, and mechanical-level Hardware-In-the-Loop (MHIL) laboratory testing methodology of prototype drive systems with energy-saving permanent-magnet electric motors, intended for use in modern construction cranes is proposed and described. This research was aimed at designing and constructing a new type of tower crane by Krupiński Cranes Company. The described research stage was necessary...
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Long-term Hindcast Simulation of Currents, Sea Level, Water Temperature and Salinity in the Baltic Sea
PublicationThis dataset contains the results of numerical modelling of currents, sea level, water temperature and salinity over a period of 50 years (1958–2007) in the Baltic Sea. A long-term hindcast simulation was performed using a three-dimensional hydrodynamic model (PM3D) based on the Princeton Ocean Model (POM). The spatial resolution was 3 nautical miles, i.e. about 5.5 km. Currents, water temperature, and salinity were recorded...
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Size effect at aggregate level in microCT scans and DEM simulation – Splitting tensile test of concrete
PublicationThe paper describes an experimental and numerical study of size effect on concrete cylindrical specimens in splitting tensile test. Own experimental campaign was performed on specimens with 5 various diameters from D = 74, 105, 150, 192 and 250 mm with hardboard loading strips (distributed load according to standard methods) scaled proportionally to the specimen diameter. The crack opening-control system was applied to obtain the...
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Accelerated simulation-driven design optimisation of compact couplers by means of two-level space mapping
PublicationIn this study, the authors discuss a robust and efficient technique for rapid design of compact couplers. The approach exploits two-level space mapping (SM) correction of an equivalent circuit model of the coupler structure under design. The first SM layer (local correction) is utilised to ensure good matching between the equivalent circuit and the electromagnetic model at the component level. Subsequent global correction allows...
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Long-term hindcast simulation of sea level in the Baltic Sea
Open Research DataThe dataset contains the results of numerical modelling of sea level fluctuations over a period of 50 years (1958-2007) in the Baltic Sea. A long-term hindcast simulation was performed using a three-dimensional hydrodynamic model PM3D (Kowalewski and Kowalewska-Kalkowska, 2017), a new version of the M3D model (Kowalewski, 1997). The hydrodynamic model...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 10 μm graphene channel
Open Research DataThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
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Electrical characteristics simulation of top-gated graphene field-effect transistor (GFET) with 10 μm x 3 μm graphene channel
Open Research DataThe presented data set is part of the research on graphene field-effect transistor (GFET) modelling. The calculations were performed with the use of GFET Tool program (https://nanohub.org/resources/gfettool DOI: 10.4231/D3QF8JK5T), which enabled simulation of the drain current (Id) vs. drain voltage (Vd) characteristics for different gate voltages (Vg)...
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A Perspective on Fast-SPICE Simulation Technology
PublicationThis chapter presents an introduction to the area of accelerated transistor-level (‘fast-SPICE’) simulation for automated verification and characterization of integrated circuits (ICs) from technologist’s perspective. It starts with outlining goals, expectations and typical usage models for fast-SPICE simulators, stressing how they differ from regular SPICE tools. It continues with presenting and classifying core technologies typically...
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Accurate electrothermal modelling of high frequency DC-DC converters with discrete IGBTs in PLECS software
PublicationIn the paper, a novel, improved method of the IGBT junction temperature computations in the PLECS simulation software is presented. The developed method aims at accuracy of the junction temperature computations in PLECS by utilising a more sophisticated model of transistor losses, and by taking into account variability of transistor thermal resistance as a function of its temperature. A detailed description of the proposed method,...
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Accurate Computation of IGBT Junction Temperature in PLECS
PublicationIn the article, a new method to improve the accuracy of the insulated-gate bipolar transistor (IGBT) junction temperature computations in the piecewise linear electrical circuit simulation (PLECS) software is proposed and described in detail. This method allows computing the IGBT junction temperature using a nonlinear compact thermal model of this device in PLECS. In the method, a nonlinear compact thermal model of the IGBT is...
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Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter
PublicationA promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the...
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Modelling of Graphene Field-Effect Transistor for lectronic sensing applications
PublicationA top-gated Graphene Field-Effect Transistor (GFET) suitable for electronic sensing applications was modelled. The applied simulation method reproduces correctly the output transfer GFET characteristics and allows to investigate doping effect caused by different physical, chemical or biological factors. The appearance of additional charge in the system results in the shift of the current-voltage characteristic. This feature could...
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Low-Voltage LDO Regulator Based on Native MOS Transistor with Improved PSR and Fast Response
PublicationIn this paper, a low-voltage low-dropout analog regulator (ALDO) based on a native n-channel MOS transistor is proposed. Application of the native transistor with the threshold voltage close to zero allows elimination of the charge pump in low-voltage regulators using the pass element in a common drain configuration. Such a native pass transistor configuration allows simplification of regulator design and improved performance,...
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Method of sacrificial anode dual transistor-driving in stray current field
PublicationIn order to control a magnesium anode in a stray current interference field, a dual transistor driving system has been proposed. It consisted of a combination of PNP and NPN transistors. Dual transistor driven system and direct anode to cathode connection were electrochemically tested in 3% NaCl solution. The dual transistor driven system increased the anode efficiency and reduced hydrogen evolution and the risk of embrittlement....
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The behavioural model of graphene field-effect transistor
PublicationThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-states characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations...
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Gate Driver with Overcurrent Protection Circuit for GaN Transistors
PublicationThe improvement of the gate driver for GaN transistor is presented in this paper. The proposed topology contains the overcurrent protectionwith the two-stage turning off and independent control of turn on and off time of the GaN transistor. The operation of driver and its application in thehalf-bridge converter are described using both simulation and prototype measurements. The overcurrent protection was tested in Double Pulse...
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Prediction of ringing frequencies in DC-DC boost converter
PublicationIn the paper ringing phenomena in a DC-DC boost converter is presented. The ringing frequency is calculated using an analytical formula. The necessary wide band models of MOSFET transistor, passive and parasitics are described. The calculation results are verified in simulation and laboratory tests.
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Method of sacrificial anode transistor-driving in cathodic protection system
PublicationA magnesium anode driving system has been proposed. A PNP driving transistor has been used. Electrochemical testing in 3%NaCl, results and comparison of the driving system and classic direct anode to cathode connection are presented. The driving system reduced the protection current and stabilized the working conditions of the anode. Higher anode efficiency was achieved. Overprotection and hydrogen embrittlement threats were prevented...
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Electromagnetic interference frequencies prediction model of flyback converter for snubber design
PublicationSnubber design for flyback converters usually requires experimental prototype measurements or simulation based on accurate and complex models. In this study simplified circuit modelling of a flyback converter has been described to dimension snubbers in early stage of design process. Simulation based prediction of the transistor and diode ringing frequencies has been validated by measurements in a prototype setup. In that way obtained...
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Wideband Modeling of DC-DC Buck Converter with GaN Transistors
PublicationThe general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter extraction are presented. The results of simulation in Saber@Sketch simulation software and measurements are compared. Next, the model...
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Open-transistor fault diagnostics in voltage-source inverters by analyzing the load current
PublicationA novel method is presented for the detection andisolation of open-transistor faults in voltage-source invertersfeeding low-power AC motors. The method is based onmonitoring two diagnostic signals, one indicating sustained nearzerovalues of output current and thus permitting fault detection,the other permitting the isolation of the particular transistorwhich went faulty. The latter signal is the ratio of the averagephase current...
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Multi-Transformer Flyback Converter for Supplying Isolated IGBT and MOSFET Drivers
PublicationA multi transformer flyback converter topology for supplying transistor drivers is presented. The topology presents some advantages over typical multi output single transformer, as reduction of effective leakage inductance, equal magnetic coupling between primary and secondary circuits and better isolation between outputs. Simulation study carried out in the LTSpice IV program and preliminary experimental results indicate high...
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Graphene field-effect transistor application for flow sensing
PublicationMicroflow sensors offer great potential for applications in microfluidics and lab-on-a-chip systems. However, thermal-based sensors, which are commonly used in modern flow sensing technology, are mainly made of materials with positive temperature coefficients (PTC) and suffer from a self-heating effect and slow response time. Therefore, the design of novel devices and careful selection of materials are required to improve the overall...
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Paweł Rościszewski dr inż.
PeoplePaweł Rościszewski received his PhD in Computer Science at Gdańsk University of Technology in 2018 based on PhD thesis entitled: "Optimization of hybrid parallel application execution in heterogeneous high performance computing systems considering execution time and power consumption". Currently, he is an Assistant Professor at the Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, Poland....
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Performance optimization of continuous-time OTA-C filters.
PublicationW pracy przedstawiono analityczne podejśćie do optymalizacji właściwości filtrów OTA-C czasu ciągłego. Zaprezentowano efektywne metody analizy zniekształceń nieliniowych i szumów dla dowolnego filtru OTA-C wykorzystując ogólny model oparty na opisie macierzowym. Rezultaty teoretyczne odnoszące się do kaskadowego filtru typu Butterwotha były weryfikowane na drodze porównawczej z wynikami otrzymanymi na poziomie ''Transistor-Level''...
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Hybrid Modulation for Modular Voltage Source Inverters with Coupled Reactors
PublicationThis paper proposes and discusses a concept of a hybrid modulation for the control of modular voltage source inverters with coupled reactors. The use of coupled reactors as the integrating elements leads to significant reduction in the size and weight of the circuit. The proposed modulation combines novel coarsely quantized pulse amplitude modulation (CQ-PAM) and innovative space-vector pulse width modulation (SVPWM). The former...
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A New, Reconfigurable Circuit Offering Functionality of AND and OR Logic Gates for Use in Algorithms Implemented in Hardware
PublicationThe paper presents a programmable (using a 1-bit signal) digital gate that can operate in one of two OR or AND modes. A circuit of this type can also be implemented using conventional logic gates. However, in the case of the proposed circuit, compared to conventional solutions, the advantage is a much smaller number of transistors necessary for its implementation. Circuit is also much faster than its conventional counterpart. The...
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A quasi-2D small-signal MOSFET model - main results
PublicationDynamic properties of the MOS transistor under small-signal excitation are determined by kinetic parameters of the carriers injected into the channel, i.e., the low-field mobility, velocity saturation, mobility at the quiescent-point (Q-point), longitudinal electric field in the channel, by dynamic properties of the channel, as well as by an electrical coupling between the perturbed carrier concentration in the channel and the...
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A current-controlled FET
PublicationA novel semiconductor device, viz., Horizontally-Split-Drain Current-Controlled Field-Effect Transistor (HSDCCFET) with two control electrodes is proposed in this works. For the sake of brevity, the device can be called a CCFET. Operating principle of the proposed transistor is based on one of the galvanomagnetic phenomena, the Biot-Savart-Laplace law and a Gradual Channel Detachment Effect (GCDE). The transistor is dedicated...
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A simplified behavioral MOSFET model based on parameters extraction for circuit simulations.
PublicationThe paper presents results on behavior modeling of general purpose Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for simulation of power electronics systems requiring accuracy both in steady-state and in switching conditions. Methods of parameters extraction including nonlinearity of parasitic capacitances and steady-state characteristics are based on manufacturer data sheet and externally measurable characteristics....
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Horizontally-split-drain MAGFET - a highly sensitive magnetic field sensor
PublicationWe propose a novel magnetic field sensitive semiconductor device, viz., Horizontally-Split-Drain Magnetic-Field Sensitive Field-Effect Transistor (HSDMAGFET) which can be used to measure or detect steady or variable magnetic fields. Operating principle of the transistor is based on one of the galvanomagnetic phenomena and a Gradual Channel Detachment Effect (GCDE) and is very similar to that of Popovic and Baltes's SDMAGFET. The...
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Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors
PublicationThis paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscilla-tors as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip imple-mentation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability...
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Measurements of Subnanometer Molecular Layers
PublicationSelected methods of formation and detection of nanometer and subnanometer molecular layers were shown. Additionally, a new method of detection and measurement with subnanometer resolution of layers adsorbed or bonded to the gate dielectric of the ion selective field effect transistor (ISFET) was presented.
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Reducing common mode voltage and bearing currents in quasi - resonant DC - link inverter
PublicationIn the paper, a concept of separation of an inverter-fed induction motor drive from its mains supply by two transistor switches inserted in the dc-link circuit is reexamined based on the proposed parallel quasi-resonant dc-link inverter (PQRDCLI). The objective of the paper is to show an advantage of the proposed topology in limiting high frequency common mode voltage and bearing currents. In the laboratory setup, an induction...
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The noise macromodel of an optocoupler including 1/(f^alfa) noise source
PublicationThe course of design of an optocoupler's PSpice macromodel including noise sources is described. The PSpice macromodel is proposed for the low frequency range. The PSpice model of a MOSFET transistor was applied as the noise source type 1/(f^alfa) in an optocoupler PSpice macromodel. In the enhanced macromodel the value of an exponent α can be changed in the range of 0.8 - 1.25.
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Nonlinear Control of a Doubly Fed Generator Supplied by a Current Source Inverter
PublicationNowadays, wind turbines based on a doubly fed induction generator (DFIG) are a commonly used solution in the wind industry. The standard converter topology used in these systems is the voltage source inverter (VSI). The use of reverse-blocking insulated gate bipolar transistor (RB-IGBT) in the current source inverter topology (CSI), which is an alternative topology, opens new possibilities of control methods. This paper presents...
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Deep-Learning-Based Precise Characterization of Microwave Transistors Using Fully-Automated Regression Surrogates
PublicationAccurate models of scattering and noise parameters of transistors are instrumental in facilitating design procedures of microwave devices such as low-noise amplifiers. Yet, data-driven modeling of transistors is a challenging endeavor due to complex relationships between transistor characteristics and its designable parameters, biasing conditions, and frequency. Artificial neural network (ANN)-based methods, including deep learning...
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Modeling the effect of parasitic capacitances on the dead-time distortion in multilevel NPC inverters
PublicationA simple model is derived and verified for evaluating the effect of parasitic capacitances on the dead-time related voltage distortion in multilevel NPC voltage source inverters. The model permits well-defined and precise compensation of dead-time distortion, exhibiting meaningful improvement on compensation methods neglecting the effects of parasitic capacitances. A simple formula is given for evaluating the capacitances as serial/parallel...
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Numerical Methods
e-Learning CoursesNumerical Methods: for Electronics and Telecommunications students, Master's level, semester 1 Instructor: Michał Rewieński, Piotr Sypek Course description: This course provides an introduction to computational techniques for the simulation and modeling of a broad range of engineering and physical systems. Concepts and methods discussed are widely illustrated by various applications including modeling of integrated circuits,...
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Growth and Isolation of Large Area Boron‐Doped Nanocrystalline Diamond Sheets: A Route toward Diamond‐on‐Graphene Heterojunction
PublicationMany material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas‐phase temperatures that would destroy the device being coated. The development of freestanding, thin boron‐doped diamond nanosheets grown on tantalum foil substrates via microwave plasma‐assisted CVD is reported. These diamond...
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Zastosowanie oprogramowania COMSIS do oceny dynamicznej odporności na zakłócenia cyfrowych układów kombinacyjnych.
PublicationWyniki badania odporności układów cyfrowych na zakłócenie dynamiczne w istotny sposób zależą od parametrów sygnału stymulującego. Proponowana metodyka zakłada pobudzanie badanego układu sygnałem szumu białego o określonej szerokości pasma częstotliwości. Badania symulacyjne z modelem układu progowego oraz szybkiego komparatora z histerezą przeprowadzono w środowisku COMSIS. Uzyskane wyniki potwierdzają, że im węższe pasmo szumu...
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Robert Bogdanowicz dr hab. inż.
PeopleRobert Bogdanowicz received his Ph.D. degree with honours in Electronics from the Gdansk University of Technology. He worked as a post-doc researcher in Ernst-Moritz-Arndt-Universität Greifswald Institut für Physik. He has initiated optical emission imaging of muti-magnetron pulsed plasma and contributed to the development of antibacterial implant coatings deposited by high-power impulse magnetron sputtering. He moved back to...
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EMI mitigation of GaN power inverter leg by local shielding techniques
PublicationThis paper presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common mode (CM) current noise at converter’s DC input. The research study is conducted for 650V Enhancement mode Gallium Nitride (GaN) power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce...
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Introduction to Numerical Simulation
e-Learning CoursesCourse description: This interdisciplinary course provides an introduction to computational techniques for the simulation of a broad range of engineering and physical systems. Concepts and methods discussed are widely illustrated by applications drawn from electrical, mechanical, and chemical engineering. Topics include: mathematical formulations of simulation problems; sparse direct and iterative linear system solution techniques,...
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Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons
PublicationWe report the results of the investigation of low-frequency electronic noise in ZrS3 van der Waals semiconductor nanoribbons. The test structures were of the back-gated field-effect-transistor type with a normally off n-channel and an on-to-off ratio of up to four orders of magnitude. The current–voltage transfer characteristics revealed significant hysteresis owing to the presence of deep levels. The noise in ZrS3 nanoribbons...
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Wrażliwość probabilistyczna stanów granicznych konstrukcji - metoda Monte Carlo
PublicationPraca ukazuje zastosowanie metody symulacyjnej Monte Carlo w analizie losowej konstrukcji inżynierskich. Systematyka metod losowych obejmuje ich trzy poziomy, z zaznaczeniem poziomu trzeciego, o dowolnych typach zmiennych losowych – zmiennych podstawowych problemu. Ukazano przykład modelowana losowego obciążenia wiatrem na podstawie 10-letnich pomiarów prędkości wiatru, wykazując zgodność zbioru danych z rozkładem ekstremów Gumbela....
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Morphology control via dual solvent crystallization for high-mobility functionalized pentacene-blend thin film transistors
PublicationWe present an approach to improving the performance of solution processed organic semiconductor transistors based on a dual solvent system. We here apply this to a blend containing the π-conjugated small molecule 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and polystyrene, which acts as an inert binder. Using a semiconductor-binder solution of two solvents, where the main solvent is a better solvent of the small...
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Rozpoznawanie elementów elektronicznych w obudowach SOT-23
PublicationProdukowane obecnie elementy elektroniczne do montażu powierzchniowego (SMD) mają tak małe obudowy, że producenci nie są w stanie umieszczać na nich dostatecznej ilości oznaczeń umożliwiających ich jednoznaczną identyfikację. Ponadto, podobnie jak w przypadku elementów do montażu przewlekanego, w obudowie jednego typu mogą być zamknięte różne rodzaje elementów. Przykładem takiej obudowy jest obudowa SOT-23 (Small Outline Transistor)....
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Evaluation the environmental fate of pharmaceuticals using a level III model based on poly-parameter linear free energy relationships
PublicationOpisano możliwości zastosowania modelu ''Level III Model'' do opisu losu środowiskowego pozostałości farmaceutyków w środowisku. Zastosowany model umożliwia oszacowanie trwałości, stężeń oraz transportu poszczególnych zanieczyszczeń pomiędzy poszczególnymi elementami składowymi środowiska (powietrze, woda, gleba i osady denne).
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Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation
PublicationThe gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced...