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Search results for: thin-walled elements
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The AFM micrographs of vanadium oxides thin films deposited on quartz glass - the influence of the thickness of the thin film on its morphology
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a quartz glass substrate and were...
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Luminescence properties of TeOx-Eu thin films
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Tb thin films
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Dy thin films
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
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XRD investigations of the lithium titanate thin films
Open Research DataNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing temperature on as-prepared films crystallization, the coatings were heated at temperature from 500 °C up to 600 °C for 20h. Structure of manufactured thin films was investigated using X-ray diffraction (XRD). The most visible...
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Graphene oxide thin films deposited on a PCB board - chemical analysis
Open Research DataGraphene oxides based films were measured by X-ray photoemission spectroscopy (XPS) method. TheXPS measurements were carried out with the Omicron NanoTechnology UHV equipment. The hemispherical spectrophotometer was equipped with a 128-channel collector. The XPS measurements were performed at room temperature at a pressure below 1.1 × 10−8 mBar. The...
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Electrical measurements of the dewetting of metal thin films
Open Research DataIn situ observations of dewetting of thin films is very complicated. One of the method, that helps to observe it, could be electrical measurements. For experiments, thin gold, silver and gold-silver nanoalloy films were deposited by magnetron sputtering method. Films were deposited on a Corning glass substrates. Samples were measured by four point method...
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The AFM micrographs of vanadium oxides thin films obtained at 800°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on a silicon substrate and vanadium thin films were obtained by annealing as-prepared films at...
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The AFM micrographs of vanadium oxides thin films obtained at 1200°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 400°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 600°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of of vanadium oxides thin films obtained at 300°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxide thin films obtained at 100°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 150°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 200°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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The AFM micrographs of vanadium oxides thin films obtained at 450°C
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on quartz glass and silicon substrate and vanadium thin films were obtained by annealing as-prepared...
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Structural analysis of the tellurium dioxide thin films
Open Research DataTeO2 thin films were deposited by magnetron sputtering method. After deposition, amorphous samples were annealed at various temperatures. Influence of annealing temperature on a presence of crystalline phase was investigated.
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Optical transmission of the Niobium thin films
Open Research DataNiobium thin films with a thickness of 200nm were deposited n a Corning glass substrate by magnetron sputtering method. The optical transmission spectra in a visible light range were.recorded. Investigations showed a good optical transmission thru the layers for each samples, annealed at various temperatures. For measurements samples annealed at 500,...
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XRD analysis of the tellurium dioxide thin films
Open Research DataTellurium dioxide thin films were deposited by magnetron sputtering method. The XRD analysis of the films annealed at 200, 500, 650 and 700 celsius degree showed appearing of crystalline phase in a higher temeratures.
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Analysis of the electrical parameters of the LTO thin films
Open Research DataLithium titanate thin films were derived by sol-gel technique. Films with thickness ca. 800 nm were annealed for various time, in a range of 10h-80h at 550 deg. Electrical conductivity in a wide range of temperature was measured.
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XRD patterns of V2O5 thin film morphology dependent on substrate types
Open Research DataThe DataSet contains the XRD patterns of the V2O5 thin film structure dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h.
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Luminescence of TeO2:Eu thin films
Open Research DataTellurium dioxide doped by europium thin films were deposited by magnetron sputtering method and simultaneously heated at 200 oC. Presence of Eu ions and their valence states was confirmed by X-ray photoemission spectroscopy measurements. The structure of the films as well as the influence of europium dopant on crystalline structure of the films was...
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SEM micrographs of V2O5 thin film morphology dependent on substrate types
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin film morphology dependent on substrate types. The as-prepared thin films were deposited on alumina, zirconium, zirconium oxide and metallic vanadium substrate, then was annealing under an oxidizing atmosphere at 600C for 10h. The results show that the morphology of...
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XRD patterns of V2O5 thin films deposited on silicon substrate
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range of 300-600C. The results show that the structure of the films dependent on the annealing temperature.
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XRD patterns of V2O5 thin films deposited on quartz glass
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on a quartz glass substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 200-600C. The results show that the structure of the films dependent on the annealing temperature.
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Luminescence properties of TeOx thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. The sol was obtained by vigorously stirring precursor solution at 50°C for 2h, then the temperature was raised...
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Ultra-thin film of aluminum oxide influence on the plasmon resonance in gold nanostructures
Open Research DataUltra-thin film of aluminum oxide influence on the plasmon resonance in gold nanostructures was measured by UV-VIS spectroscopy. Ultra thin film of Al2O3 was deposited on a gold nanostructures. Thickness of film was 2nm - 8nm. Shift of plasmon resonance was observed, as a result of various dielectric constant of layer.
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XRD patterns of VO2 and V2O3 thin films obtained at 500°C
Open Research DataThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon atmosphere.
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XRD patterns of VO2 and V2O3 thin films obtained at 700°C
Open Research DataThe DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (5-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon atmosphere.
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TEM and EDX study of the Al2O3 ultra thin films
Open Research DataThe ultra-thin layers of Al2O3 were deposited on a silicon substrates. The method of atomic layer deposition (Beneq TFS 200 ALD system) was chosen as the proper method of dielectric layer deposition. This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water....
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The AFM micrographs of vanadium oxides thin films deposited on silicon - the influence of the thickness of the film on morphology
Open Research DataThe DataSet contains the atomic force microscope images of the surface of vanadium oxide thin films. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (1, 2 or 3 AsP layers) were deposited on a silicon substrate and were annealing...
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Optical measurements of lithium titanate sol-gel derived thin films
Open Research DataNanocrystalline thin films with 800 nm thickness were prepared by sol–gel method. To examine the influence of the annealing time on as-prepared films crystallization, the coatings were heated at 550 °C for 10, 20 and 80 h. On the basis of transmission characteristic optical properties were calculated. It was found that transmission through the thin...
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SEM micrographs of morphology evolution of V2O5 thin films on quartz glass
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a quartz glass substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 200-600C. The results show that the morphology of the films dependent on the annealing temperature.
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SEM micrographs of morphology evolution of V2O5 thin films on silicon substrate
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under an oxidizing atmosphere in the temperature range 250-600C. The results show that the morphology of the films dependent on the annealing temperature.
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Structural investigations of the Al2O3 ultra thin films
Open Research DataUltra-thin layers of Al2O3 were deposited by atomic layer deposition (ALD) (Beneq TFS 200 ALD system). This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2...
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Luminescence properties of TeOx-Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of dysprosium ions were added, the nitrates were used as a source of rare-earth ions....
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Luminescence properties of TeOx-Tb thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Tb thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of terbium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Luminescence properties of TeOx-Eu thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-Eu thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of europium ions were added, the nitrates were used as a source of rare-earth ions. The...
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Impedance spectroscopy of the lithium titanate doped by copper thin films
Open Research DataLithium titanate doped by copper thin films were derived by sol-gel method. Prepared gel was deposited by spin-coating technique. Samples with various content of Cu were measured by impedance spectroscopy method in a wide range of temperature, from -120 up to 150 deg.
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Optical measurements of LTO:Cu sol-gel derived thin films
Open Research DataLithium titanate doped by copper thin films were manufactured by chemical, sol-gel method. Flms were deposited on a Corning glass substrated by spin coater. To calculated optical band gap and other optcal parameters, UV-VIS spectroscopy measurements were performed. For measurements selected samples with various content of Cu.
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XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. ...
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Optical properties of tellurium dioxide thin films
Open Research DataTeO2 and TeO2 doped by Eu thin films manufactured by magnetron sputtering method were measured by optical spectroscopy. Metallic Te target and Te-Eu mosaic target with diameter of 50.8 mm were sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate...
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SEM micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111)
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were...
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Chemical investigation of the Al2O3 ultra-thin films
Open Research DataUltra-thin layers of oluminum oxide (Al2O3) were deposited by ALD method. Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2 and 8 nm of alumina...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films were deposited on a silicon and quartz glass substrate and were annealing at 1000°C under an argon atmosphere.
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XPS measurements of the iron elements covered by chromium
Open Research DataAnticorrosive coatings are an important issue in modern materials engineering. One of the most commonly used, for that coating materials, is chrome. Three metal elements were measured, named as Turcja, WB Tech and Nomet. Names were given according to producer of elements. XPS measurements of the Cr 2p region give an ansver concering on surface chemical...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 700°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 500°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon...
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Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method
Open Research DataThin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737...
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Luminescence properties of TeOx-2%Eu1.5%Tb1.5%Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-2%Eu1.5%Tb1.5%Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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Luminescence properties of TeOx-2%Eu1.5%Tb1.5%Tm thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-2%Eu1.5%Tb1.5%Tm thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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Luminescence properties of TeOx-1%Eu1.5%Tb2.5%Dy thin films annealing under an oxidizing atmosphere
Open Research DataThe DataSet contains the emission and excitation spectra of TeOx-1%Eu1.5%Tb2.5%Dy thin films. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. Next, the 5% mol of rare-earth ions were added, the nitrates were used as a source of rare-earth...
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Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under...
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Structure and optical measurements of Eu doped tellurium oxide thin films
Open Research DataThin films were deposited by magnetron sputtering method and simultaneously heated at 200 oC. Presence of Eu ions and their valence states was confirmed by X-ray photoemission spectroscopy measurements. The structure of the films as well as the influence of europium dopant on crystalline structure of the films was examined by X-ray diffraction method. ...
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Structure evolution of V2O5 thin films deposited on quartz glass substrate - High-Temperature X-ray Diffraction
Open Research DataThe DataSet contains the XRD patterns of V2O5 thin films deposited on guartz glass. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the quartz glass substrate. The structure was measured in-situ during heating between 50-800°C under synthetic...
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SEM micrographs of morphology evolution of VO2 and V2O3 thin films obtained at 1000°C dependent on film thickness
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (2-3 AsP layers) were deposited on a silicon substrate and were annealing at 1000°C under an argon...
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XPS data of as-grown BDD, as-implanted Mn-BDD, and annealed Mn-BDD thin films
Open Research DataXPS survey spectra and detailed spectra O1, C1s and Mn2p of as-grown BDD, as-implanted Mn-BDD, and annealed Mn-BDD thin films. X-ray photoelectron spectroscopy (XPS) studies were conducted on an Escalab 250 Xi from Thermo Fisher Scientific with an Al Kα radiation. Results were published in the paper ( https://doi.org/10.1002/adfm.202308617)
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Substrate characterization in a electrochemically derived Manganium-Cobaltium thin films
Open Research DataManganium-Cobaltium thin films were electrochemically deposited on a Ni foams subsrates in a one-step process at −1.1 V vs. Ag/AgCl in an aqueous solution of differently concentrated Mn(NO3)2·4H2O and Co(NO3)2·6H2O with the deposition time limited by charges of 60, 120, and 200 mC at 25 °C. The concentration ratios of Mn(NO3)2·4H2O to Co(NO3)2·6H2O...
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Depth profile of the composition of 8 nm Al2O3 thin film
Open Research Data8 nm layer of aluminum oxide (Al2O3) was deposited by ALD method on a s. Atomic layer deposition provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. To investigate the profile of concenration of...
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Gdańsk University of Technology graduates’ assessment of individual elements of education in the completed field of study – years 2015-2016
Open Research DataThe dataset includes data from the survey on the Gdańsk University of Technology graduates' from the years 2015-2016 on their assessment of individual elements of education in the completed field of study. The survey was conducted in the period from 2017 to 2018, two years after the respondents obtained graduate status. The research sample included...
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Gdańsk University of Technology graduates’ assessment of individual elements of education in the completed field of study – years 2017-2018
Open Research DataThe dataset includes data from the survey on the Gdańsk University of Technology graduates' from the years 2017-2018 on their assessment of individual elements of education in the completed field of study. The survey was conducted in the period from 2019 to 2020, two years after the respondents obtained graduate status. The research sample included...
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Gdańsk University of Technology graduates’ evaluation of the study program in terms of elements developing digital competencies – years 2016-2018
Open Research DataThe dataset includes data from the survey on the Gdańsk University of Technology graduates' from the years 2016-2018 on their evaluation of the study program in terms of elements developing digital competencies. The survey was conducted in the period from 2018 to 2020, two years after the respondents obtained graduate status. The research sample included...
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TEM data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis Dataset include presentation of summarized TEM investigation of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited...
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Structural investigations of the LTO:Cu thin films
Open Research DataLithium titanate (Li1+xTi2-xO4) doped with Cu2+ ions was synthesized by sol-gel processing method. The structure was characterized by X-ray Diffraction (XRD). All samples revealed presence of LTO spinel phase. X-ray pattern of undoped LTO was free of any impurities and other crystal phases. Similarly, samples with low amount of copper dopant (x = 0.05...
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SEM/EDX data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis Data set include SEM and EDX results of (Mn,Co,Fe,Ni,Cr)3O4 high-entropy spinel oxide prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers were characterised after exposure to temperatures in the range of 400–900 ◦C. The as-deposited layers were amorphous,...
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XRD data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe, annealed in a range from 400 to 900oC
Open Research DataDataset include collected XRD data of (Cr,Fe,Mn,Co,Ni)3O4 high-entropy spinel oxide thin films deposited by spray pyrolysis technique on amorphous SiO2 substrates and annealed from 400 to 900oC. Samples were prepared in the form of a ~ 500 nm thin film utilising a facile spray pyrolysis technique. The structural and electrical properties of the layers...
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Total electrical conductivity data of (Cr,Fe,Mn,Co,Ni)3O4 High-entropy spinel oxide thin films deposited on amorphous SiO2 substrate by spray pyrolysis techniqe
Open Research DataThis dataset includes electrical conductivity measurements results measured by van der pauw technique up to 900oC.
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The electrochemical studies of thin boron-doped diamond films deposited at conductive poly(lactic acid) 3D prints
Open Research DataThe dataset contains the electrochemical characteristics of the electrodes composed of thin boron-doped diamond films coated on commercially available graphene-doped polylactide acid. The boron doping level expressed as the [B]/[C] ratio in the gas phase for these studies was 500 and 10,000 ppm.
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Fitted impedance spectra of a symmetrical porous Sr0.86Ti0.65Fe0.35O3 oxygen electrode (sintered at 1000 °C, measured at 700 °C and 0.1% pO2) with an individual contributions of the respective fitting elements
Open Research DataThis dataset contains exemplary impedance spectra (measured at 700 °C and 0.1% pO2) for porous Sr0.86Ti0.65Fe0.35O3 oxygen electrode sintered at 1000 °C. Results of symmetric cell impedance measurement were converted to electrode surfaces area and dived by two electrodes. Dataset conatins also fitting results and individual contributions of the respective...
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Fitted impedance spectra of a symmetrical porous Sr0.86Ti0.65Fe0.35O3 oxygen electrode (sintered at 1000 °C, measured at 800 °C and 0.1% pO2) with an individual contributions of the respective fitting elements
Open Research DataThis dataset contains exemplary impedance spectra (measured at 800 °C and 0.1% pO2) for porous Sr0.86Ti0.65Fe0.35O3 oxygen electrode sintered at 1000 °C. Results of symmetric cell impedance measurement were converted to electrode surfaces area and dived by two electrodes. Dataset conatins also fitting results and individual contributions of the respective...
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Results of EIS measuremnts and DRT analysis of SrTi0.30Fe0.70O3-d oxygen electrode at 800 °C and 1% oxygen partial pressure by using three R-CPE fiting elements
Open Research DataThis dataset contains electrochemical impedance spectroscopy and Distribution of Relaxation Times analysis results for symmetrical cell with porous SrTi0.30Fe0.70O3-d oxygen electrodes sintered at 800 °C. EIS spectra were measured at 800 °C and 1% of oxygen partial pressure. EIS and DRT spectra of simmulated three R-CPE elements from equivalent circuit,...
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Results of EIS measuremnts and DRT analysis of SrTi0.30Fe0.70O3-d oxygen electrode at 800 °C and 1% oxygen partial pressure by using two R-CPE fiting elements
Open Research DataThis dataset contains electrochemical impedance spectroscopy and Distribution of Relaxation Times analysis results for symmetrical cell with porous SrTi0.30Fe0.70O3-d oxygen electrodes sintered at 800 °C. EIS spectra were measured at 800 °C and 1% of oxygen partial pressure. EIS and DRT spectra of simmulated two R-CPE elements from equivalent circuit,...
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The additional elements of remuneration, apart from the basic salary
Open Research DataThe results include employee responses from Australia, Japan, Malaysia, Uzbekistan and the UK. The respondents declared different professional experience (from 1 to 40 years). It is worth emphasizing that among the respondents there were people with many years of professional career. This is important because the results of this research can be compared...
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Scanning electron microscopy (SEM) images of boron-doped diamond thin films at poly(lactic acid)
Open Research DataThe dataset contains the photos obtained by scanning electron microscope(SEM), revealing the surface morphology and cross-section of boron-doped diamond electrodes on commercially available graphene-doped polylactide acid. The boron doping level expressed as the [B]/[C] ratio in the gas phase for these studies was 500 and 10,000 ppm. The top views of...
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XRD patterns of VO2 and V6O13 nanostructures
Open Research DataThe DataSet contains the XRD patterns of VO2 and V6O13 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under a reducing atmosphere (94% Ar, 6% H2) at 500, 600 and 700C for 10h.
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SEM micrographs of VO2 and V6O13 nanostructures
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of VO2 and V6O13 thin films deposited on a silicon substrate. The as-prepared thin films were annealing under a reducing atmosphere (94% Ar, 6% H2) at 600 and 700C for 10h.
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Morphology of the gold nanoislands
Open Research DataDewetting of the thin metallic films leads to formation of an isolated islands. morphology of nanostructures was measured by SEM microscope. Thin gold films with a thickness of 1.2 nm, 1.5 nm and 3.4 nm were anealed at 550, 600 and 650 Celcius degress.
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Depth XPS profile of vanadium pentoxide
Open Research DataVanadium pentoxide sample was manufactured by sol-gel method and deposited on a substrate by spin coating technique. To determine depth profile of chemical composition of thin film, etching by Argon ion gun was used. Thin film was etched three times. Chemical composition was measured by XPS method.
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XRD patterns of the V2O5 coatings after thermal treatment under reducing atmosphere
Open Research DataThe DataSet contains the XRD patterns of V2O5 coatings on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C, 600C, and 700C for 10 under a reducing atmosphere (94% Ar, 6% H2).
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SEM micrographs of the V2O5 coatings after thermal treatment under reducing atmosphere
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of V2O5 coatings on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 600C and 700C for 10 under a reducing atmosphere (94% Ar, 6% H2).
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Dewetting of silver films detected by XPS method
Open Research DataDewetting of silver thin films was detected by XPS method. Thin metallic films were deposited by magnetron sputtering method. Formation of nanostructures , as a result of thermal annealing, was confirmed by SEM microscope. For comparision three samples were measured. Bulg gold, as-deposited silver film with thickness of 3 nm and nanostructures.
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Scanning electron microscopy (SEM) images of the boron-doped carbon nanowalls surfaces
Open Research DataThe dataset contains the scanning electron micrographs (SEM), revealing the surface morphology of boron-doped carbon nanowalls electrodes on silicon substrates. The surface is characterized by nano-walled structures. The obtained electrodes were doped with boron at the level of [B]/[C] = 5000ppm in the gas atmosphere during the synthesis.
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Scanning electron microscopy (SEM) images of the boron-dopied carbon nanowalls surfaces
Open Research DataThe dataset contains the scanning electron micrographs (SEM), revealing the surface morphology of boron-doped carbon nanowalls electrodes on silicon substrates. The surface is characterized by nano-walled structures. The obtained electrodes were doped with boron at the level of [B]/[C] = 1200ppm in the gas atmosphere during the synthesis.
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Scanning electron microscopy (SEM) images of the boron-doped carbon nanowalls surfaces
Open Research DataThe dataset contains the scanning electron micrographs (SEM), revealing the surface morphology of boron-doped carbon nanowalls electrodes on silicon substrates. The surface is characterized by nano-walled structures. The obtained electrodes were doped with boron at the level of [B]/[C] = 2000ppm in the gas atmosphere during the synthesis.
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Au nanostructures coated with a ultrathin film of Al2O3 - measurements and FDTD simulations
Open Research DataGold plasmonic platforms have been coated with an ultra-thin films of aluminium oxide. Optical measurements, showing the influence of the thickness of Al2O3 on plasmon resonance position. The observed red-shift of the resonance location with the increase of the thickness of the Al2O3 film, can be explained by the change in the dielectric function of...
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Non-adiabatic coupling elements between the diatomic silver anion and neutral silver dimer plus continuum electron
Open Research DataThe process of a two-channel decay of the diatomic silver anion (Ag2-), namely the spontaneous electron ejection giving Ag2 + e- and the dissociation leading to Ag- + Ag is theoretically studied. The ground state potential energy curves (PECs) of the neutral silver dimer and anionic silver diatomic molecule are calculated using the single reference...
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Morphology and structure of V2O5 nanorods deposited on the silicon substrate after reduction
Open Research DataThe DataSet contains the XRD patterns and SEM micrographs of V2O5 nanorods on the silicon substrate after thermal treatment under a reducing atmosphere. Thin films were annealed at 500C for 40 under a reducing atmosphere (94% Ar, 6% H2).
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Chemical investigations of the MoO3 doped by K films deposited FTO
Open Research DataMoO3 thin films were synthesized via thermal annealing of thin, metallic Mo films deposited onto the FTO substrate using a magnetron sputtering system. The influence of photointercalation of alkali metal cation (K+) into the MoO3 structure on the photoelectrochemical properties of the molybdenum trioxide films was investigated. The chemical characterisation...
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The AFM micrographs of V2O5 single crystals
Open Research DataThe DataSet contains the atomic force microscope images of the surface of V2O5 single crystals. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The As-prepared films were deposited on a quartz glass substrate and were annealing at 600°C under synthetic air.
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The most important elements of the social package that guide students of Wrocław University of Science and Technology when choosing their first job
Open Research DataThis dataset contains the results of research that were carried out by the Wrocław University of Science and Technology in March and April 2016, using an anonymous "on-line" questionnaire. 1,320 people took part in the study entitled "My ideal employer" - students and doctoral students of all faculties of the university (including those fields of study...
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XRD patterns of vanadium oxide nanostructures on silicon substrate obtained by V2O5 recrystallization
Open Research DataThe DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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XRD patterns of vanadium oxide nanostructures on quartz glass substrate obtained by V2O5 recrystallization
Open Research DataThe DataSet contains the XRD patterns of vanadium oxide nanostructures on quartz glass substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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Chemical composition of V2O5 nanorods
Open Research DataThe DataSet contains the chemical compositions of the V2O5 nanorods on a silicon substrate. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The As-prepared thin films were annealed at 600C under a synthetic air atmosphere.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 1000°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 1000°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 800°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 800°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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SEM micrographs of vanadium oxide nanostructures obtained by V2O5 recrystallization at 1200°C
Open Research DataThe DataSet contains the scanning electron microscopy (SEM) micrographs of vanadium oxide nanostructures on quartz glass and silicon substrates obtained by recrystallization of V2O5 thin films at 1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.
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Measurements of AuAg nanostructures
Open Research DataExtensive UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters.
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Processed measurements of AuAg nanostructures
Open Research DataExtensive processed UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters.
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UV-Vis measurements and SEM images of Ag nanostructures
Open Research DataUv-vis and SEM of Ag nanostructures. Structures were obtained by dewetting thin films. Various fabrication conditions i.e. temperature, time of the annealing and thickness of the initial layer were subsequently changed.
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SEM - Expanded polystyrene coated by TiO2 or SiO2-TiO2
Open Research DataData contain SEM images taken in SEM Hitachi SU8000 with voltage of 5.0 kV. SEM images show expanded plystyrene spheres coated by a thin layer of TiO2 or bilayer SiO2-TiO2.